Title :
A VCVS-based equivalent circuit model for static substrate thermal coupling
Author :
Walkey, D.J. ; Smy, T.J. ; Dickson, R.G. ; Brodsky, J.S. ; Zweidinge, D.T. ; Fox, R.M.
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
fDate :
6/23/1905 12:00:00 AM
Abstract :
An RTH-VCVS equivalent circuit approach is presented which allows thermal coupling to be accurately represented in circuit simulation. The method is applied to a multi-segment GaAs HBT device, and current gain collapse is successfully predicted with physical model parameters
Keywords :
III-V semiconductors; active networks; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; GaAs; VCVS equivalent circuit model; circuit simulation; current gain collapse; multi-segment GaAs HBT device; static substrate thermal coupling; Circuit simulation; Coupling circuits; Equivalent circuits; Fingers; Heating; Power dissipation; Resistors; Temperature dependence; Thermal conductivity; Thermal resistance;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957867
