• DocumentCode
    1665799
  • Title

    A VCVS-based equivalent circuit model for static substrate thermal coupling

  • Author

    Walkey, D.J. ; Smy, T.J. ; Dickson, R.G. ; Brodsky, J.S. ; Zweidinge, D.T. ; Fox, R.M.

  • Author_Institution
    Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
  • fYear
    2001
  • fDate
    6/23/1905 12:00:00 AM
  • Firstpage
    102
  • Lastpage
    105
  • Abstract
    An RTH-VCVS equivalent circuit approach is presented which allows thermal coupling to be accurately represented in circuit simulation. The method is applied to a multi-segment GaAs HBT device, and current gain collapse is successfully predicted with physical model parameters
  • Keywords
    III-V semiconductors; active networks; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; GaAs; VCVS equivalent circuit model; circuit simulation; current gain collapse; multi-segment GaAs HBT device; static substrate thermal coupling; Circuit simulation; Coupling circuits; Equivalent circuits; Fingers; Heating; Power dissipation; Resistors; Temperature dependence; Thermal conductivity; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-7019-8
  • Type

    conf

  • DOI
    10.1109/BIPOL.2001.957867
  • Filename
    957867
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1665799