DocumentCode :
1665862
Title :
Elimination of numerical underflow in the modelling of optoelectronic devices using multiple precision
Author :
Kaunga-Nyirenda, S.N. ; Lim, J.J. ; Bull, S. ; Larkins, E.C.
Author_Institution :
Univ. of Nottingham, Nottingham, UK
fYear :
2011
Firstpage :
115
Lastpage :
116
Abstract :
In 2D and quasi-3D simulations, Fermi-level pinning of the surfaces has been found to result in the decoupling of the electron and hole populations, preventing numerical convergence to the correct solution. In this work, we report on the elimination of numerical underflow in the self-consistent solution of the Poisson and continuity equations in a 2D optoelectronic device simulator. The use of extended precision to represent the state variables eliminates the numerical underflow and consequently the decoupling of the electron and hole populations.
Keywords :
Fermi level; convergence of numerical methods; optoelectronic devices; semiconductor device models; stochastic processes; 2D optoelectronic device simulator; 2D simulations; Fermi level pinning; Poisson equation; continuity equation; electron-hole decoupling; multiple precision; numerical convergence; numerical underflow; optoelectronic device modelling; quasi3D simulations; self consistent solution; Charge carrier processes; Equations; Mathematical model; Numerical models; Semiconductor devices; Surface charging; Three dimensional displays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on
Conference_Location :
Rome
ISSN :
2158-3234
Print_ISBN :
978-1-61284-876-1
Electronic_ISBN :
2158-3234
Type :
conf
DOI :
10.1109/NUSOD.2011.6041167
Filename :
6041167
Link To Document :
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