DocumentCode
1665862
Title
Elimination of numerical underflow in the modelling of optoelectronic devices using multiple precision
Author
Kaunga-Nyirenda, S.N. ; Lim, J.J. ; Bull, S. ; Larkins, E.C.
Author_Institution
Univ. of Nottingham, Nottingham, UK
fYear
2011
Firstpage
115
Lastpage
116
Abstract
In 2D and quasi-3D simulations, Fermi-level pinning of the surfaces has been found to result in the decoupling of the electron and hole populations, preventing numerical convergence to the correct solution. In this work, we report on the elimination of numerical underflow in the self-consistent solution of the Poisson and continuity equations in a 2D optoelectronic device simulator. The use of extended precision to represent the state variables eliminates the numerical underflow and consequently the decoupling of the electron and hole populations.
Keywords
Fermi level; convergence of numerical methods; optoelectronic devices; semiconductor device models; stochastic processes; 2D optoelectronic device simulator; 2D simulations; Fermi level pinning; Poisson equation; continuity equation; electron-hole decoupling; multiple precision; numerical convergence; numerical underflow; optoelectronic device modelling; quasi3D simulations; self consistent solution; Charge carrier processes; Equations; Mathematical model; Numerical models; Semiconductor devices; Surface charging; Three dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on
Conference_Location
Rome
ISSN
2158-3234
Print_ISBN
978-1-61284-876-1
Electronic_ISBN
2158-3234
Type
conf
DOI
10.1109/NUSOD.2011.6041167
Filename
6041167
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