Title :
Direct method for bipolar base-emitter and base-collector capacitance splitting using high frequency measurements
Author :
Ardouin, B. ; Zimmer, T. ; Mnif, H. ; Fouillat, P.
Author_Institution :
Lab. de Microelectronique IXL, Univ. of Bordeaux I, Talence, France
fDate :
6/23/1905 12:00:00 AM
Abstract :
This paper presents a new method based on HF measurements to determine the intrinsic and extrinsic base-emitter and base-collector junction capacitances parameters of bipolar transistors. After measuring the total junction capacitance, this method describes how to split the value between an intrinsic (Cji) and an extrinsic (Cjx ) part versus bias. From the resulting capacitance voltage behaviour, Cji(V) and Cjx(V), the capacitance specific model parameters (Cj0, Vj, γ1 ) can be extracted for the intrinsic as well as for extrinsic part. The results can be introduced in recent compact bipolar models such as the HICUM or MEXTRAM model
Keywords :
bipolar transistors; capacitance; p-n junctions; semiconductor device measurement; semiconductor device models; HF measurements; HICUM model; MEXTRAM model; base-collector junction capacitances parameters; base-emitter junction capacitances parameters; bipolar transistors; capacitance-voltage behaviour; compact bipolar models; direct method; extrinsic junction capacitances parameters; high frequency measurements; intrinsic junction capacitances parameters; Bipolar transistors; Capacitance measurement; Capacitance-voltage characteristics; Differential equations; Electric resistance; Electric variables measurement; Frequency measurement; Hafnium; Implants; Silicon carbide;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957870
