Accurate simulation on band-to-band tunneling induced leakage current using a global non-local model

Author

Peng, Jack Zezhong ; Haddad, Sameer ; Hsu, James ; Chen, Jian ; Longcor, Steve ; Chang, Chi

Author_Institution

Adv. Micro Devices Inc., Sunnyvale, CA, USA

fYear

1995

Firstpage

141

Lastpage

143

Abstract

In this work, a global non-local band-to-band tunneling (GBBT) model is introduced to take into account non-local tunneling effects between the two points across the potential barrier and also the tunneling contribution from all the nearby mesh cells with band-bending larger than the band-gap, This model has been implemented in a 2D device simulator UMDFET2 which is coupled with 2D process simulator TMA-SUPREM4. The model has been able to accurately and-consistently predict band-to-band tunneling (BBT) currents over a wide range of drain and gate voltages for different device structures without adjusting model parameters

Keywords

MOSFET; digital simulation; leakage currents; semiconductor device models; tunnelling; 2D device simulator; 2D process simulator; TMA-SUPREM4; UMDFET2; band-bending; band-to-band tunneling; drain voltages; gate voltages; global nonlocal model; induced leakage current; mesh cells; potential barrier; EPROM; Electrons; Leakage current; Lifting equipment; Numerical models; Photonic band gap; Predictive models; Semiconductor process modeling; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.499654

Filename

499654