Silicon carbide devices for power applications

Author

Clarke, R.C.

Author_Institution

Northrop Grumman Sci. & Technol. Center, Baltimore, MD, USA

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

124

Abstract

Summary form only given. Wide bandgap transistor developments described in this work include CW SiC SITs with output powers at L-band of 16 W/cm, and increased breakdown voltage SITs having a 400 V blocking voltage and 35 W/cm output power. Progress with pulse devices includes a 800 W UHF SIT and a 900 W L-band SIT. In SiC power switching the SiC BJT is being explored for high speed, high efficiency applications

Keywords

UHF bipolar transistors; UHF field effect transistors; microwave bipolar transistors; microwave field effect transistors; microwave power transistors; power bipolar transistors; power field effect transistors; semiconductor device breakdown; silicon compounds; static induction transistors; wide band gap semiconductors; 400 V; 800 W; 900 W; CW SiC SITs; L-band; S-band; SiC; SiC BJT; SiC power switching; UHF SIT; blocking voltage; breakdown voltage; high power CW devices; power applications; pulse devices; wide bandgap transistors; L-band; Microwave devices; Microwave transistors; Packaging; Power generation; Pulse amplifiers; Pulse circuits; Silicon carbide; Thermal conductivity; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-7019-8

Type

conf

DOI

10.1109/BIPOL.2001.957872

Filename

957872