• DocumentCode
    1665925
  • Title

    Catalytic growth and characterization of single-crystalline aluminum nitride nanowires

  • Author

    Wu, Hue-Min ; Liang, Jaw-Yeu

  • Author_Institution
    Dept. of Phys., Chinese Culture Univ., Taipei, Taiwan
  • fYear
    2010
  • Firstpage
    478
  • Lastpage
    479
  • Abstract
    We report a simple synthesis of AlN nanowires via catalyst-assisted chemical vapor deposition method. These high quality and uniform nanowires have smooth surface with diameter of 50 nm and length of 10-30 ¿ m, which are hexagonal single-crystal with lattice parameters c = 0.497 nm, a = 0.272 nm and grow along [100] direction. The morphology and structure were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and Raman analysis. Our results provide the first direct evidence of vapor-liquid-solid growth mechanism for the synthesis of AlN nanowires.
  • Keywords
    III-V semiconductors; Raman spectra; X-ray diffraction; aluminium compounds; catalysis; chemical vapour deposition; crystal growth; lattice constants; nanowires; scanning electron microscopy; semiconductor growth; semiconductor quantum wires; transmission electron microscopy; wide band gap semiconductors; AlN; Raman analysis; X-ray diffraction; [100] direction; catalyst-assisted chemical vapor deposition method; catalytic growth; lattice parameters; scanning electron microscopy; single-crystalline aluminum nitride nanowires; size 10 mum to 30 mum; size 50 nm; transmission electron microscopy; vapor-liquid-solid growth mechanism; Aluminum nitride; Chemical vapor deposition; III-V semiconductor materials; Nanowires; Scanning electron microscopy; Spectroscopy; Substrates; Surface morphology; Thermal conductivity; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424859
  • Filename
    5424859