DocumentCode
1665925
Title
Catalytic growth and characterization of single-crystalline aluminum nitride nanowires
Author
Wu, Hue-Min ; Liang, Jaw-Yeu
Author_Institution
Dept. of Phys., Chinese Culture Univ., Taipei, Taiwan
fYear
2010
Firstpage
478
Lastpage
479
Abstract
We report a simple synthesis of AlN nanowires via catalyst-assisted chemical vapor deposition method. These high quality and uniform nanowires have smooth surface with diameter of 50 nm and length of 10-30 ¿ m, which are hexagonal single-crystal with lattice parameters c = 0.497 nm, a = 0.272 nm and grow along [100] direction. The morphology and structure were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and Raman analysis. Our results provide the first direct evidence of vapor-liquid-solid growth mechanism for the synthesis of AlN nanowires.
Keywords
III-V semiconductors; Raman spectra; X-ray diffraction; aluminium compounds; catalysis; chemical vapour deposition; crystal growth; lattice constants; nanowires; scanning electron microscopy; semiconductor growth; semiconductor quantum wires; transmission electron microscopy; wide band gap semiconductors; AlN; Raman analysis; X-ray diffraction; [100] direction; catalyst-assisted chemical vapor deposition method; catalytic growth; lattice parameters; scanning electron microscopy; single-crystalline aluminum nitride nanowires; size 10 mum to 30 mum; size 50 nm; transmission electron microscopy; vapor-liquid-solid growth mechanism; Aluminum nitride; Chemical vapor deposition; III-V semiconductor materials; Nanowires; Scanning electron microscopy; Spectroscopy; Substrates; Surface morphology; Thermal conductivity; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424859
Filename
5424859
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