Title :
Progress in gallium nitride-based bipolar transistors
Author :
Xing, H. ; Green, D.S. ; McCarthy, L. ; Smorchkova, I.P. ; Chavarkar, P. ; Mates, T. ; Keller, S. ; DenBaars, S. ; Speck, J. ; Mishra, Umesh K.
Author_Institution :
Dept. of Mater., California Univ., Santa Barbara, CA, USA
fDate :
6/23/1905 12:00:00 AM
Abstract :
An overview is presented of progress in (Al,Ga)N-based bipolar transistors along with recent work at UCSB. Current gains at 300 K of 10 in GaN BJTs and up to 35 in AlGaN/GaN HBTs respectively are reported. Critical issues involved in p-GaN growth and the device fabrication are addressed
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; heterojunction bipolar transistors; molecular beam epitaxial growth; power bipolar transistors; reviews; semiconductor device breakdown; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; 300 K; AlGaN-GaN; AlGaN-based bipolar transistors; AlGaN/GaN HBTs; GaN BJTs; GaN based bipolar transistors; GaN:Mg; MBE; MOCVD; Mg-doped GaN; device fabrication; high breakdown voltage; p-GaN growth; p-type GaN; regrown base; regrown emitter; Bipolar transistors; Consumer electronics; Electric breakdown; Fluorescent lamps; Gallium nitride; HEMTs; III-V semiconductor materials; MODFETs; Photonic band gap; Thermal conductivity;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957873
