Bias-induced color-tuned semiconductor devices

Author

Kolbas, R.M. ; Reed, F.E. ; Zhang, D.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

1995

Firstpage

151

Lastpage

153

Abstract

A three terminal light emitter in which the emission wavelength is selected by an applied voltage and the emission intensity is independently modulated by an applied current has been demonstrated. The device exhibits coaxial optical output, a large wavelength separation (8210 Å or 7640 Å, Δλ=570 Å), low operational voltages (<5 V) and currents, and high emission contrast ratios (as large as 159:1 and as small as 1:76). Having selected the wavelength the optical output power can be independently modulated without loss of wavelength selectivity. Wavelength switching can be accomplished while maintaining a high contrast ratio and optical output power

Keywords

laser tuning; optical interconnections; quantum well lasers; surface emitting lasers; wavelength division multiplexing; 7640 to 8210 angstrom; applied current; bias-induced colour-tuned devices; coaxial optical output; contrast ratios; emission intensity; emission wavelength; operational currents; operational voltages; optical output power; quantum-well lasers; three terminal light emitter; wavelength selectivity; wavelength separation; wavelength switching; Coaxial components; Intensity modulation; Light emitting diodes; Low voltage; Optical devices; Optical losses; Optical modulation; Power generation; Semiconductor devices; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.499657

Filename

499657