Title :
0.18 μm SiGe BiCMOS technology for wireless and 40 Gb/s communication products
Author :
Schuegraf, Klaus ; Racanelli, Marco ; Kalburge, Amol ; Shen, Bruce ; Hu, Chun ; Chapek, David ; Howard, David ; Quon, David ; Feiler, David ; Dornisch, Dieter ; U´Ren, Greg ; Abdul-Ridha, Hadi ; Zheng, Jie ; Zhang, Jinshu ; Bell, Ken ; Ring, Ken ; Yin, Ke
Author_Institution :
Silicon RF Platform, Conexant Syst., Newport Beach, CA, USA
fDate :
6/23/1905 12:00:00 AM
Abstract :
A 0.18 μm SiGe BiCMOS process optimized for wireless and 40 Gb/s networking applications is described. Bipolar performance of 130 GHz (Ft) and 150 GHz (Fmax) is reported. Exceptional LNA characteristics have been measured with 2.5 GHz NFmin of 0.83 dB and MAG of 19.7 dB drawing only 1.5 mA of collector current. A metal thin-film resistor, metal-insulator-metal capacitor and two layers of thick Cu help provide low-loss passive components
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; integrated circuit interconnections; integrated circuit technology; optical communication equipment; optical fibre networks; semiconductor materials; 0.18 micron; 0.83 dB; 1.5 mA; 130 GHz; 150 GHz; 19.7 dB; 2.5 GHz; 40 Gb/s networking applications; 40 Gbit/s; Cu; LNA characteristics; SiGe BiCMOS technology; bipolar performance; collector current; low-loss passive components; metal thin-film resistor; metal-insulator-metal capacitor; thick Cu layers; wireless communication; BiCMOS integrated circuits; CMOS process; Capacitance; Copper; Electromigration; Germanium silicon alloys; Implants; Inductors; Resistors; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957878
