DocumentCode :
1666106
Title :
The study on preparation of ZnO nanowire in AAO by electrodeposition method
Author :
Wang, Danli ; Ruan, Yongfeng ; Zhang, Lingcui ; Zhang, Shouchao ; Ma, Pengfei
Author_Institution :
Sch. of Sci., Tianjin Univ., Tianjin, China
fYear :
2010
Firstpage :
1335
Lastpage :
1336
Abstract :
Ordered zinc oxide (ZnO) nanowire arrays embedded in anodic aluminum oxide (AAO) template were fabricated by electrodepositing zinc (Zn) and then oxidizing the deposited Zinc. The microstructures and compositions of Zn/AAO, ZnO/AAO assemblies were characterized by field emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD). The results indicate that the Zn nanowire arrays are uniformly assembled into the nanochannels of AAO with the high filling ratio. Through a thermal treatment in oxygen atmosphere at 700°C for 36 h, the deposited Zinc oxidized completely. Photoluminescence (PL) measurement of the ZnO/AAO assembly exhibits a strong 496 nm emission band which is contributed by the various defects of ZnO.
Keywords :
II-VI semiconductors; X-ray diffraction; anodisation; electrodeposition; field emission electron microscopy; heat treatment; nanowires; photoluminescence; scanning electron microscopy; semiconductor quantum wires; zinc compounds; AAO; FE-SEM; X-ray diffraction; ZnO; anodic aluminum oxide template; electrodepositing zinc; electrodeposition method; field emission scanning electron microscopy; high filling ratio; microstructures; nanochannels; ordered zinc oxide nanowire arrays; oxygen atmosphere; photoluminescence measurement; temperature 700 C; thermal treatment; time 36 h; wavelength 496 nm; Aluminum oxide; Assembly; Atmosphere; Electron emission; Filling; Microstructure; Scanning electron microscopy; X-ray diffraction; X-ray scattering; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424866
Filename :
5424866
Link To Document :
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