Title :
Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N2O
Author :
Hsiao, Chi-Ying ; Yang, Jing-Hsung ; Gong, Jyh-Rong ; Lyu, Dong-Yuan ; Lin, Tai-Yuan ; Lu, Cheng-Tao ; Lin, Der-Yuh
Author_Institution :
Dept. of Phys., Nat. Chung Hsing Univ., Taichung, Taiwan
Abstract :
Indium-doped zinc oxide (IZO) films were deposited on (11-20) sapphire substrates by atomic layer deposition (ALD) using diethyl-zinc (DEZn), trimethyl-indium (TMIn) and nitrous oxide (N2O) as precursors. The optical, structural and conductive properties of the ALD-grown IZO films were characterized by optical transmission and absorption spectroscopy, field emission scanning electron microscopy, and Hall measurement. The IZO films with high In-doping were found to exhibit optical transmittances being higher than 90% in the visible spectra along with resistivities being 8.72×10-4 ¿-cm. Burstein-Moss shift effect was also observed in the high In-incorporated IZO films due to the high-doping background.
Keywords :
Hall effect; II-VI semiconductors; atomic layer deposition; electrical resistivity; field emission electron microscopy; indium; light transmission; semiconductor doping; semiconductor thin films; transparency; visible spectra; wide band gap semiconductors; zinc compounds; Burstein-Moss shift effect; Hall measurement; ZnO:In; absorption spectroscopy; atomic layer deposition; field emission scanning electron microscopy; indium doped zinc oxide films; optical transmission; resistivity; transparent conductive films; visible spectra; Atom optics; Atomic layer deposition; Conductive films; Electromagnetic wave absorption; Electron optics; Optical films; Optical microscopy; Spectroscopy; Stimulated emission; Zinc oxide;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424867
