DocumentCode
1666148
Title
Characterization of Er-doped ZnO nanorod arrays for broadband antireflection
Author
Chen, Cheng-Ying ; Chao, Yen-Chun ; Lin, Chin-An ; Lo, Jian-Wei ; He, Jr-Hau
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2010
Firstpage
1339
Lastpage
1340
Abstract
We demonstrate a practical optoelectronic application of of Er-doped ZnO nanorod arrays (NRAs) synthesized by hydrothermal method serving as an antireflection (AR) coating. Er-doped ZnO NRAs exhibits broadband AR characteristics for unpolarized, TE-polarized, and TM-polarized lights. Due to growth on any surface of devices/substrates with ease, broadband AR characteristics, Er-doped ZnO NRAs can benefit greatly the performance of optoelectronic devices, such as light emitting diodes and solar cells.
Keywords
antireflection coatings; erbium; nanorods; optical arrays; optoelectronic devices; zinc compounds; ZnO:Er; broadband antireflection coating; hydrothermal method; nanorod arrays; optoelectronic devices; Coatings; Fresnel reflection; Helium; Light emitting diodes; Optical devices; Optical refraction; Optical surface waves; Optoelectronic devices; Photovoltaic cells; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424868
Filename
5424868
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