DocumentCode :
1666219
Title :
Constriction of ferromagnetic patterned thin film by AFM scratch lithography
Author :
Jang, Kyungmin ; Ishibashi, Yoshifumi ; Iwata, Daisuke ; Suganuma, Hidenori ; Yamada, Tsutomu ; Takemura, Yasushi
Author_Institution :
Dept. of Electr. & Comput. Eng., Yokohama Nat. Univ., Yokohama, Japan
fYear :
2010
Firstpage :
482
Lastpage :
483
Abstract :
Nanofabrication using atomic force microscope (AFM) has attracted high attention as a technique fabricating nanoscale structures. In order to obtain nanostructures and devices, resist scratch lithography and direct scratch lithography were performed using AFM scratch lithography with scanning parameters of applied force and scan speed. The nanoconstriction which has 139 nm width and 3.0 × 102 nm2 cross-sectional area was fabricated on NiFe thin film using direct scratch lithography successfully.
Keywords :
atomic force microscopy; ferromagnetic materials; iron alloys; nanolithography; nanopatterning; nickel alloys; AFM scratch lithography; NiFe; atomic force microscopy; direct scratch lithography; ferromagnetic patterned thin film; nanoconstriction; nanofabrication; resist scratch lithography; thin film constriction; Atomic force microscopy; Lithography; Magnetic devices; Magnetic domain walls; Magnetoresistance; Nanoscale devices; Nanostructures; Resists; Size control; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424871
Filename :
5424871
Link To Document :
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