Title :
Single to double gate TIGBTs-possible road-map to ultra-high voltage bipolar-MOS devices
Author :
Trajkovic, Tatjana ; Udrea, Florin ; Amaratunga, Gehan A J
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fDate :
6/23/1905 12:00:00 AM
Abstract :
We have developed single gate Trench IGBTs for 1.2 kV and 3.3 kV with ultra-low on-state/ switching losses and propose here for the first time a novel MOS controllable bipolar device, the double gate Trench IGBT (2G-TIGBT). The 2G-TIGBT can be seen as a successful continuation of the trench technology to ultra high voltage ranges such as those present in HVDC systems
Keywords :
insulated gate bipolar transistors; losses; power semiconductor switches; power transistors; 1.2 kV; 3.3 kV; HVDC systems; MOS controllable bipolar device; UHV bipolar-MOS devices; double gate TIGBTs; single gate TIGBTs; switching behaviour; trench IGBTs; trench technology; ultra high voltage ranges; ultra-low on-state losses; ultra-low switching losses; Anodes; Cathodes; Control systems; HVDC transmission; Insulated gate bipolar transistors; Motor drives; Size control; Switches; Thyristors; Voltage control;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-7019-8
DOI :
10.1109/BIPOL.2001.957886
