A clip-and-restore technique for phase desensitization in a 1.2V 65nm CMOS oscillator for cellular mobile and base stations

Author

Visweswaran, Akshay ; Staszewski, R. Bogdan ; Long, John R.

Author_Institution

Delft Univ. of Technol., Delft, Netherlands

fYear

2012

Firstpage

350

Lastpage

352

Abstract

Base-station (BTS) RX oscillator phase noise requirements between 600kHz and 3MHz are difficult to satisfy using a fully monolithic VCO fabricated in bulk-CMOS technology. The GSM-900-BTS and the DCS-1800-BTS RX specifications at 800kHz of -147dBc/Hz and -138dBc/Hz, respectively, are considered the most difficult to meet. In GSM mobile stations (MS), the transmit and receive bands are 20MHz apart, which sets a stringent TX phase noise requirement of -162dBc/Hz at 20MHz offset [1]. A VCO satisfying this inadvertently meets the relatively relaxed RX specification.

Keywords

CMOS analogue integrated circuits; cellular radio; monolithic integrated circuits; phase noise; radiofrequency oscillators; voltage-controlled oscillators; BTS RX oscillator phase noise requirement; CMOS oscillator; DCS-1800-BTS RX specification; GSM MS; GSM mobile station; GSM-900-BTS RX specification; base station; base-station RX oscillator phase noise requirement; bulk-CMOS technology; cellular mobile; clip-and-restore technique; frequency 20 MHz; frequency 600 kHz to 3 MHz; fully monolithic VCO fabrication; phase desensitization; size 65 nm; stringent TX phase noise requirement; voltage 1.2 V; Logic gates; Noise measurement; Phase noise; Power demand; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

978-1-4673-0376-7

Type

conf

DOI

10.1109/ISSCC.2012.6177042

Filename

6177042