DocumentCode
1666359
Title
Fabrication of gated cold cathode using standing thin film induced by ion-beam bombardment
Author
Yoshida, Tomoya ; Baba, Akiyoshi ; Asano, Tanemasa
Author_Institution
Center for Microelectron. Syst., Kyushu Inst. of Technol., Fukuoka, Japan
fYear
2005
Firstpage
38
Lastpage
39
Abstract
In this paper, the gated cold cathode was fabricated using standing of thin film. It was also confirmed that the emission current of 10 μA can be obtained from single tip. The cathode can be fabricated by using standard thin-film processing and, therefore, this new process based on the new finding is very attractive to fabricate large-size field emission display.
Keywords
cathodes; field emission; ion beam applications; metallic thin films; silicon alloys; tungsten alloys; 10 muA; WSi; emission current; field emission display; gated cold cathode; ion-beam bombardment; standing thin film; Cathodes; Electron guns; Fabrication; Magnetic materials; Semiconductor films; Silicides; Sputter etching; Threshold voltage; Transistors; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International
Print_ISBN
0-7803-8397-4
Type
conf
DOI
10.1109/IVNC.2005.1619473
Filename
1619473
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