Title :
Fabrication of gated cold cathode using standing thin film induced by ion-beam bombardment
Author :
Yoshida, Tomoya ; Baba, Akiyoshi ; Asano, Tanemasa
Author_Institution :
Center for Microelectron. Syst., Kyushu Inst. of Technol., Fukuoka, Japan
Abstract :
In this paper, the gated cold cathode was fabricated using standing of thin film. It was also confirmed that the emission current of 10 μA can be obtained from single tip. The cathode can be fabricated by using standard thin-film processing and, therefore, this new process based on the new finding is very attractive to fabricate large-size field emission display.
Keywords :
cathodes; field emission; ion beam applications; metallic thin films; silicon alloys; tungsten alloys; 10 muA; WSi; emission current; field emission display; gated cold cathode; ion-beam bombardment; standing thin film; Cathodes; Electron guns; Fabrication; Magnetic materials; Semiconductor films; Silicides; Sputter etching; Threshold voltage; Transistors; Tungsten;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International
Print_ISBN :
0-7803-8397-4
DOI :
10.1109/IVNC.2005.1619473
