HfC-FEA controlled by built-in poly-Si TFT

Author

Nagao, M. ; Yasumuro, C. ; Sacho, Y. ; Tanoue, H. ; Kanemaru, S. ; Itoh, J.

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan

fYear

2005

Firstpage

40

Lastpage

41

Abstract

The HfC-coated Si field emitter arrays (FEA) integrated with poly-Si thin film transistors (TFT) was fabricated in this paper. The emission current was completely controlled by the build-in poly-Si TFT with lightly doped drain (LDD) structure and long channel. The switching voltage of the device is about 10 V, which is lower than that when modulating extraction gate voltage. The TFT integrated FEA is promising for uniform and low power consumption FED system. And furthermore, system on FED panel would be realized by applying current low temperature poly-Si TFT technology.

Keywords

elemental semiconductors; field emitter arrays; hafnium compounds; silicon; thin film transistors; HfC-Si; HfC-coated Si field emitter arrays; emission current; lightly doped drain structure; long channel; poly-Si thin film transistors; switching voltage; Argon; Fabrication; Flat panel displays; Hybrid fiber coaxial cables; Niobium; Sputter etching; Sputtering; Substrates; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International

Print_ISBN

0-7803-8397-4

Type

conf

DOI

10.1109/IVNC.2005.1619474

Filename

1619474