Title :
HfC-FEA controlled by built-in poly-Si TFT
Author :
Nagao, M. ; Yasumuro, C. ; Sacho, Y. ; Tanoue, H. ; Kanemaru, S. ; Itoh, J.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan
Abstract :
The HfC-coated Si field emitter arrays (FEA) integrated with poly-Si thin film transistors (TFT) was fabricated in this paper. The emission current was completely controlled by the build-in poly-Si TFT with lightly doped drain (LDD) structure and long channel. The switching voltage of the device is about 10 V, which is lower than that when modulating extraction gate voltage. The TFT integrated FEA is promising for uniform and low power consumption FED system. And furthermore, system on FED panel would be realized by applying current low temperature poly-Si TFT technology.
Keywords :
elemental semiconductors; field emitter arrays; hafnium compounds; silicon; thin film transistors; HfC-Si; HfC-coated Si field emitter arrays; emission current; lightly doped drain structure; long channel; poly-Si thin film transistors; switching voltage; Argon; Fabrication; Flat panel displays; Hybrid fiber coaxial cables; Niobium; Sputter etching; Sputtering; Substrates; Thin film transistors; Voltage;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International
Print_ISBN :
0-7803-8397-4
DOI :
10.1109/IVNC.2005.1619474
