DocumentCode
1666407
Title
Band-offset engineering at organic/inorganic semiconductor heterointerfaces
Author
Blumstengel, S. ; Henneberger, F. ; Koch, N.
Author_Institution
Inst. fur Phys., Humboldt-Univ. zu Berlin, Berlin, Germany
fYear
2011
Firstpage
151
Lastpage
152
Abstract
To realize organic/inorganic semiconductor hybrid structures with advanced optoelectronic and photonic properties, control over the structure, morphology and electronic properties of the heterointerface is required. Here, we demonstrate that the assembly of conjugated organic molecules can be steered by the surface termination of a given semiconductor. In the case of α-sexiphenyl on ZnO, the orientation of the molecules can be changed from upright-standing to flat lying by varying the molecule-substrate interaction. The morphology change is accompanied by a change of the surface dipole and the molecule´s ionization potential and provides thus an efficient means to engineer the band-offsets at the organic/inorganic heterointerface.
Keywords
II-VI semiconductors; crystal morphology; ionisation potential; organic-inorganic hybrid materials; semiconductor heterojunctions; wide band gap semiconductors; zinc compounds; α-sexiphenyl; ZnO; assembly; band-offset engineering; conjugated organic molecules; molecule ionization potential; molecule-substrate interaction; molecules orientation; morphology; optoelectronic properties; organic/inorganic semiconductor heterointerfaces; organic/inorganic semiconductor hybrid structures; photonic properties; surface dipole; surface termination; Excitons; Ionization; Materials; Morphology; Surface morphology; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on
Conference_Location
Rome
ISSN
2158-3234
Print_ISBN
978-1-61284-876-1
Electronic_ISBN
2158-3234
Type
conf
DOI
10.1109/NUSOD.2011.6041187
Filename
6041187
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