DocumentCode :
1666506
Title :
Unwanted microwave oscillator frequency shifts induced by bipolar junction transistor die attach
Author :
Folk, T. ; Mallette, L. ; Ulmer, J.
Author_Institution :
Hughes Space & Commun., Los Angeles, CA, USA
Volume :
4
fYear :
1996
Firstpage :
479
Abstract :
Two space qualified frequency synthesizers were found to exhibit noise bursting during testing, following X-ray examination, in July 1994. An inter-company, cross-functional investigation team was formed to determine root cause because of the potential impact on flight hardware. The source of the problem was isolated to poor bonding of a bipolar junction transistor (BJT). The root cause of the noise bursting phenomena was not positively identified, but there is strong correlation to the die attachment process of the BJT in the oscillator of the VCO and a soft correlation with the BJT environment
Keywords :
X-ray applications; bipolar transistor circuits; burst noise; microwave oscillators; radiation hardening (electronics); semiconductor device noise; semiconductor device packaging; semiconductor device testing; space vehicle electronics; BJT environment; VCO; X-ray examination; bipolar junction transistor; bonding; device level test; die attach; die attachment process; microwave oscillator frequency shifts; noise bursting; nominal noise; soft correlation; space qualified frequency synthesizers; testing; Cables; Frequency synthesizers; Microassembly; Microwave oscillators; Microwave transistors; Noise level; Performance evaluation; Spectral analysis; System testing; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Aerospace Applications Conference, 1996. Proceedings., 1996 IEEE
Conference_Location :
Aspen, CO
Print_ISBN :
0-7803-3196-6
Type :
conf
DOI :
10.1109/AERO.1996.499682
Filename :
499682
Link To Document :
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