Space-saving edge-termination structures for vertical charge compensation devices

High efficiency is one of the major requirements of today´s modern power architectures. To achieve the needs of modern power topologies, advanced power device designs are essential. In the field of low-voltage devices, covering a range up to 250 V, a significant reduction of the MOSFET on-resistance is achieved by employing the compensation principle based on field-plates. Such devices do require new design techniques. Advanced edge-termination structures enable high blocking voltages exceeding 100 V. This work proposes different edge-termination structures and shows first results and benchmarks of manufactured devices from this new MOSFET design generation.