Title :
Theoretical analysis of FWM by ISBT in InGaAs/AlAsSb QWs for wavelength conversion
Author :
Kuwatsuka, H. ; Akimoto, R. ; Ogasawara, T. ; Gozu, S. ; Mozume, T. ; Hasama, T. ; Ishikawa, H.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
The mechanism of FWM (four-wave mixing) by ISBT (inter-sub-band transition) in InGaAs/AlAsSb QWs (quantum wells) is analyzed theoretically. The estimated values of the third order nonlinear optical susceptibility are sufficient for coherent wavelength conversion.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; multiwave mixing; nonlinear optical susceptibility; optical wavelength conversion; quantum wells; FWM; ISBT; InGaAs-AlAsSb; coherent wavelength conversion; four-wave mixing; intersub-band transition; quantum wells; theoretical analysis; third order nonlinear optical susceptibility; Indium gallium arsenide; Nonlinear optics; Optical polarization; Optical waveguides; Optical wavelength conversion; Photonic band gap; Photonics; four wave mixing; inter sub-band transition; wavelength conversion;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-61284-876-1
Electronic_ISBN :
2158-3234
DOI :
10.1109/NUSOD.2011.6041194
