DocumentCode
1666545
Title
Theoretical analysis of FWM by ISBT in InGaAs/AlAsSb QWs for wavelength conversion
Author
Kuwatsuka, H. ; Akimoto, R. ; Ogasawara, T. ; Gozu, S. ; Mozume, T. ; Hasama, T. ; Ishikawa, H.
Author_Institution
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
fYear
2011
Firstpage
159
Lastpage
160
Abstract
The mechanism of FWM (four-wave mixing) by ISBT (inter-sub-band transition) in InGaAs/AlAsSb QWs (quantum wells) is analyzed theoretically. The estimated values of the third order nonlinear optical susceptibility are sufficient for coherent wavelength conversion.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; multiwave mixing; nonlinear optical susceptibility; optical wavelength conversion; quantum wells; FWM; ISBT; InGaAs-AlAsSb; coherent wavelength conversion; four-wave mixing; intersub-band transition; quantum wells; theoretical analysis; third order nonlinear optical susceptibility; Indium gallium arsenide; Nonlinear optics; Optical polarization; Optical waveguides; Optical wavelength conversion; Photonic band gap; Photonics; four wave mixing; inter sub-band transition; wavelength conversion;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on
Conference_Location
Rome
ISSN
2158-3234
Print_ISBN
978-1-61284-876-1
Electronic_ISBN
2158-3234
Type
conf
DOI
10.1109/NUSOD.2011.6041194
Filename
6041194
Link To Document