Title :
A 0.0025mm2 bandgap voltage reference for 1.1V supply in standard 0.16μm CMOS
Author :
Annema, Anne-Johan ; Goksun, George
Author_Institution :
Univ. of Twente, Enschede, Netherlands
Abstract :
Todays ICs usually employ one bandgap voltage reference (BGVR) circuit to generate a well defined voltage that is reused at many places in that IC. The classical BGVR generates a reference voltage that is slightly larger than the material bandgap: a little above 1200mV in silicon. For deep-sub-micron technologies the supply voltage is about the same as the material bandgap which prevents using the classical bandgap structure. As a solution a number of BGVR topologies that create a sub-1V are invented; most of them are based on the structure introduced by Banba [1], some are using resistive voltage division [2] or voltage averaging [3]. For low-power operation high-ohmic resistors (occupying a large area!) must be used in all these techniques, leading to an immediate trade-off between power consumption and chip-area. This trade-off prevents the local generation of reference voltages where they are required: either the power penalty or the area penalty would be too significant. Alternative topologies that do not require high-ohmic resistors typically are not-BGVR-based circuits relying on threshold voltages and hence require trimming to achieve low spread.
Keywords :
CMOS integrated circuits; reference circuits; BGVR; CMOS integrated circuit; bandgap voltage reference; local reference voltage generation; size 0.16 mum; voltage 1.1 V; CMOS integrated circuits; Photonic band gap; Threshold voltage; Topology; Transistors; Voltage measurement;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-0376-7
DOI :
10.1109/ISSCC.2012.6177053