Title :
Fianite in electronics and photonics
Author :
Buzynin, A.N. ; Osiko, V.V. ; Buzynin, Yu.N. ; Drozdov, M.N. ; Lomonova, E.E. ; Khrykin, O.I. ; Trishenkov, M.A. ; Zvonkov, B.N.
Author_Institution :
A.M.Prokhorov Gen. Phys. Inst., Russian Acad. of Sci., Moscow, Russia
Abstract :
Many of conventional dielectric materials already exhausted their resources for electronics. For instance, based on Si/SiO2/Si devices approached to their physical limits. Therefore further progress in this area is connected with application of new materials. Fianite, or yttria-stabilized zirconia (hafnia) (YSZ (H)), having unique combination of physical and chemical properties, is multifunctional material for new technologies. It can be used in nanoelectronic and nanophotonic as: monolithic substrate and buffer layers for Si and III-V epitaxy; gate dielectric; alternative to SiO2 isolating layer; protective layer. Some possibilities of application of fianite in these directions are investigated in the present article.
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; dielectric thin films; epitaxial layers; gallium arsenide; gallium compounds; indium compounds; nanoelectronics; nanophotonics; optical films; optical materials; photodetectors; protective coatings; semiconductor epitaxial layers; silicon; silicon compounds; solar cells; transparency; wide band gap semiconductors; yttrium compounds; zirconium compounds; AlxGa1-xAs; AlGaAs-InGaAs-GaAs; GaAs1-xN; GaN; III-V epitaxy; InxGa1-xAs; InAs; Y2O3-ZrO2; Y2O3-ZrO2-GaAs; Y2O3-ZrO2-Si; buffer layers; dielectric materials; fianite; gate dielectrics; hafnia; isolating layer; monolithic substrate; multifunctional material; nanoelectronics; nanophotonics; protective layer; yttria-stabilized zirconia; Buffer layers; Dielectric materials; Dielectric substrates; Gallium arsenide; Germanium; III-V semiconductor materials; PHEMTs; Photodetectors; Photonics; Protection;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424885
