Title :
Thermal runaway evaluation for new high-temperature Triacs in steady-state operation
Author :
Mercier, Sylvain ; Gonthier, Laurent
Author_Institution :
ASD&IPAD Div., STMicroelectron., Tours, France
Abstract :
This paper deals with thermal runaway that could occur with the new high-temperature triacs that are used with junction temperatures up to 150degC in steady state. The conditions to avoid thermal runaway at triac switch-off are discussed. An experimental validation is presented and compared with a theoretical analysis. The thermal runaway issue is evaluated for the broad range of new high-temperature triacs.
Keywords :
semiconductor switches; thyristors; high-temperature triacs; switch-off; thermal runaway; Equations; Leakage current; Power generation; Steady-state; Temperature dependence; Thermal resistance; Thyristors; Uniform resource locators; Variable speed drives; Voltage; AC voltage; Junction temperature; Leakage current; Steady state; Thermal runaway; Triac;
Conference_Titel :
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-4432-8
Electronic_ISBN :
978-90-75815-13-9
