Title :
Low resistivity efficient passivated silicon solar cells
Author :
Shi, Jiqun ; Li, Ning ; Ma, Zhiyao ; Ou, Hanan
Author_Institution :
Dept. of Solid State Electron., Huazhong Univ. of Sci. & Technol., Wuhan, China
Abstract :
Since 1983, surface passivation combined with other technology has so successfully been used for MINP, PESC, PERC and PERL, that they formed a new family of solar cell named passivated silicon solar cells. Their conversion efficiency broke through 18% barrier (AM1.5) in 1983 and reached values of 23~24% (AM1.5) in 1990 representing leading results in the area of low resistivity silicon solar cells. In this paper, results of passivated silicon solar cells are introduced. Structures and main features of MINP, PESC PERC and PERL solar cells are presented and analysed respectively
Keywords :
MIS devices; elemental semiconductors; passivation; silicon; solar cells; 18 to 24 percent; AM1.5; MINP; PERC; PERL; PESC; Si; conversion efficiency; low resistivity devices; metal-insulator-np junction; passivated emitter and rear cell; passivated emitter rear locally diffused cell; passivated emitter solar cell; solar cells; surface passivation; Alloying; Australia; Conductivity; Gettering; Passivation; Photovoltaic cells; Reflection; Silicon; Solid state circuits; Surface resistance;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.499771
