Title :
Study of a MOS imaging sensor with PIN structure
Author :
Huang, Youshu ; Zhu, Weian ; He, Qingyi ; Guolin-Lu ; Lin, Peng
Author_Institution :
Opto-Electron Instrum. Inst., Chongqing Univ., China
Abstract :
We designed and fabricated a new structure of PIN MOS imaging sensor. The result shows that its responsivity is high and its junction capacitance is small which is in good agreement with the theoretical analysis
Keywords :
MIS devices; image sensors; p-i-n photodiodes; photocapacitance; MOS imaging sensor; PIN structure; junction capacitance; photodiodes; responsivity; video capacitance; Capacitance; Charge-coupled image sensors; Circuits; Conductivity; High-resolution imaging; Image sensors; Photodiodes; Sampling methods; Sensor arrays; Switches;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.499772
