Title :
Fabrication and photoluminescence of Er-doped Al2O3 thin films deposited by sol-gel method
Author :
Fan, Chao ; Wang, Jinliang ; Tang, Ning ; Xu, Hengxing ; Wei, Guoke
Author_Institution :
Dept. of Phys., Beihang Univ., Beijing, China
Abstract :
Erbium doped Al2O3 thin films were fabricated on quartz substrate by sol-gel method. Aluminum nitrate was used as inorganic precursor, whereas erbium was introduced as erbium nitrate. And then the layers were deposited by a spin-coating procedure. The as-deposited films, in which the erbium content was between 5 and 15 w. %, was annealed in air between 600 and 1200°C. The structure, morphology and Er-dopant concentration were investigated by X-ray diffraction (XRD), scanning electron microscopy(SEM) and Rutherford back scattering (RBS), The photoluminescence (PL) of Er doped thin films in near infrared region was also investigated.
Keywords :
Rutherford backscattering; X-ray diffraction; alumina; annealing; doping profiles; erbium; photoluminescence; scanning electron microscopy; sol-gel processing; spin coating; thin films; Al2O3:Er; Rutherford backscattering; SiO2; X-ray diffraction; annealing; dopant concentration; morphology; near infrared region; photoluminescence; quartz substrate; scanning electron microscopy; sol-gel method; spin coating; temperature 600 degC to 1200 degC; thin films; Aluminum; Annealing; Electrons; Erbium; Fabrication; Morphology; Photoluminescence; Transistors; X-ray diffraction; X-ray scattering;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424896
