Fabrication and photoluminescence of Er-doped Al2O3 thin films deposited by sol-gel method

Author

Fan, Chao ; Wang, Jinliang ; Tang, Ning ; Xu, Hengxing ; Wei, Guoke

Author_Institution

Dept. of Phys., Beihang Univ., Beijing, China

fYear

2010

Firstpage

1286

Lastpage

1286

Abstract

Erbium doped Al₂O₃ thin films were fabricated on quartz substrate by sol-gel method. Aluminum nitrate was used as inorganic precursor, whereas erbium was introduced as erbium nitrate. And then the layers were deposited by a spin-coating procedure. The as-deposited films, in which the erbium content was between 5 and 15 w. %, was annealed in air between 600 and 1200Â°C. The structure, morphology and Er-dopant concentration were investigated by X-ray diffraction (XRD), scanning electron microscopy(SEM) and Rutherford back scattering (RBS), The photoluminescence (PL) of Er doped thin films in near infrared region was also investigated.

Keywords

Rutherford backscattering; X-ray diffraction; alumina; annealing; doping profiles; erbium; photoluminescence; scanning electron microscopy; sol-gel processing; spin coating; thin films; Al₂O₃:Er; Rutherford backscattering; SiO₂; X-ray diffraction; annealing; dopant concentration; morphology; near infrared region; photoluminescence; quartz substrate; scanning electron microscopy; sol-gel method; spin coating; temperature 600 degC to 1200 degC; thin films; Aluminum; Annealing; Electrons; Erbium; Fabrication; Morphology; Photoluminescence; Transistors; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424896

Filename

5424896