Data retention of partial-set states in phase change memories

Author

Braga, Stefania ; Cabrini, Alessandro ; Torelli, Guido

Author_Institution

Dept. of Electron., Univ. of Pavia, Pavia, Italy

fYear

2010

Firstpage

1287

Lastpage

1288

Abstract

A key issue in non-volatile storage is long-term data retention. This aspect is even more important in innovative storage technologies, such as phase change memory (PCM), which promises better performance with respect to traditional Flash memory. In this work, we experimentally investigate the effects of the width and the amplitude of programming pulses on the degradation of intermediate programmed resistance levels over time in PCM cells, with the aim to contribute to the development of data retention-optimized algorithms for multilevel (ML) storage in PCM.

Keywords

antimony compounds; chalcogenide glasses; flash memories; germanium compounds; mathematical programming; optimisation; phase change memories; Ge₂Sb₂Te₅; PCM cells; data retention-optimized algorithms; flash memory; intermediate programmed resistance levels; multilevel storage; nonvolatile storage; partial-set states; phase change memory; Amorphous materials; CMOS technology; Crystallization; Electric resistance; Fabrication; Nonvolatile memory; Phase change materials; Phase change memory; Space vector pulse width modulation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424897

Filename

5424897