DocumentCode :
1666984
Title :
Nonvolatile 3D-FPGA with monolithically stacked RRAM-based configuration memory
Author :
Liauw, Young Yang ; Zhang, Zhiping ; Kim, Wanki ; Gamal, Abbas El ; Wong, S. Simon
Author_Institution :
Stanford Univ., Stanford, CA, USA
fYear :
2012
Firstpage :
406
Lastpage :
408
Abstract :
SRAM based configuration memory is the primary contributor to the large area, delay, and power consumption of FPGAs relative to ASICs. In [1] it is estimated that a 3D-FPGA with the configuration memory stacked on top of the FPGA logic and routing can achieve 57% smaller die area than a baseline 2D-FPGA in 65nm CMOS technology. Motivated by these potential performance gains, several programmable logic devices with different monolithically stacked configuration memory technologies have been reported [2-4]. These memory technologies, however, require materials and/or processes that may not be compatible or scalable with CMOS processes. This paper presents the first 3D-FPGA with stacked configuration memory based on the emerging nonvolatile Resistive RAM (RRAM) technology described in [5], which is both compatible and scalable with CMOS.
Keywords :
CMOS integrated circuits; SRAM chips; application specific integrated circuits; field programmable gate arrays; ASIC; CMOS technology; RRAM technology; SRAM based configuration memory; monolithically stacked RRAM; nonvolatile 3D-FPGA; nonvolatile resistive RAM; power consumption; programmable logic device; size 65 nm; stacked configuration memory; CMOS integrated circuits; Field programmable gate arrays; Programming; Random access memory; Resistance; Routing; Tiles;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
978-1-4673-0376-7
Type :
conf
DOI :
10.1109/ISSCC.2012.6177067
Filename :
6177067
Link To Document :
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