DocumentCode
1666997
Title
Band gap engineering approaches to increase InGaN/GaN LED efficiency
Author
der Maur, M. Auf ; Carlo, A. Di ; Lorenz, K.
Author_Institution
Dept. of Electron. Eng., Univ. of Rome Tor Vergata, Rome, Italy
fYear
2011
Firstpage
193
Lastpage
194
Abstract
Nitride-based LEDs for lighting applications suffer from efficiency issues related especially to the strong polarization fields. In this paper we present a study based on device simulation showing the beneficial impact of different band gap engineering approaches on device performance in particular for green LEDs.
Keywords
III-V semiconductors; energy gap; gallium compounds; indium compounds; light emitting diodes; lighting; wide band gap semiconductors; InGaN-GaN; InGaN/GaN LED efficiency; band gap engineering; green LED; lighting applications; nitride-based LED; polarization fields; Charge carrier processes; Green products; Light emitting diodes; Radiative recombination; Stationary state; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on
Conference_Location
Rome
ISSN
2158-3234
Print_ISBN
978-1-61284-876-1
Electronic_ISBN
2158-3234
Type
conf
DOI
10.1109/NUSOD.2011.6041212
Filename
6041212
Link To Document