Title :
Compound semiconductor nanowires for next generation optoelectronics
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
GaAs, InAs and InP based nanowires were grown epitaxially on (111)B substrates by metalorganic chemical vapor deposition. Growth mechanism, microstructure and optical properties of these nanowires will be discussed in this talk.
Keywords :
III-V semiconductors; MOCVD coatings; gallium arsenide; indium compounds; nanowires; optical properties; optoelectronic devices; GaAs; InAs; InP; compound semiconductor nanowire; epitaxial growth; metalorganic chemical vapor deposition; nanowire growth mechanism; nanowire microstructure; nanowire optical property; next generation optoelectronics; Crystals; Gallium arsenide; Indium phosphide; Morphology; Nanowires; Photoluminescence;
Conference_Titel :
Photonics Society Summer Topical Meeting Series, 2010 IEEE
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4244-3730-6
Electronic_ISBN :
978-1-4244-3731-3
DOI :
10.1109/PHOSST.2010.5553657
