DocumentCode
1667015
Title
Visible compound optical cavity VSIS GaAlAs-GaAs lasers
Author
Chen, Guoying ; Liu, Mnjie ; Yin, Songyan ; Wang, Xinqiao
Author_Institution
Hebei Inst. of Technol., Tianjin, China
fYear
1995
Firstpage
182
Lastpage
184
Abstract
By using a new method of liquid phase epitaxy (LPE), a new kind of visible COC VSIS GaAlAs-GaAs semiconductor laser has been fabricated. CW threshold current is 60 mA in the visible range of 779-784 nm. And fundamental transverse and single longitudinal modes up to 18 mW/face cw operation are observed
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser modes; liquid phase epitaxial growth; optical fabrication; semiconductor lasers; 18 mW; 60 mA; 779 to 784 nm; CW threshold current; GaAlAs-GaAs; compound optical cavity VSIS laser; fabrication; fundamental transverse mode; liquid phase epitaxy; single longitudinal mode; visible semiconductor laser; Carrier confinement; Gas lasers; Hydrogen; Laser cavity resonators; Optical refraction; Optical resonators; Optical variables control; Oxidation; Power generation; Protection;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.499777
Filename
499777
Link To Document