Title :
Atomistic simulation of InGaN/GaN quantum disk LEDs
Author :
Lopez, M. ; Sacconi, F. ; der Maur, M. Auf ; Pecchia, A. ; Carlo, A. Di
Author_Institution :
Dept. Electron. Eng., Univ. of Rome Tor Vergata, Rome, Italy
Abstract :
In this work we investigate electronic and optoelectronics properties of InGaN/GaN nanocolumn quantum disk LEDs. Calculations have been performed with an atomistic tight-binding model. Results show that emission energies have a minor dependence on the nanocolumn dimension.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; nanoelectronics; optical properties; quantum optics; tight-binding calculations; wide band gap semiconductors; InGaN-GaN; atomistic simulation; atomistic tight-binding model; electronic properties; nanocolumn quantum disk LED; optoelectronics properties; Gallium nitride; Media; Nanostructures; Optical polarization; Quantum mechanics; Semiconductor process modeling; Stimulated emission;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-61284-876-1
Electronic_ISBN :
2158-3234
DOI :
10.1109/NUSOD.2011.6041213
