Title :
Microstructures and visible photoluminescence of excimer laser crystallized a-Si:H/a-SiNx:H multi-quantum wells
Author :
Li, Zhifeng ; Huang, Xinfan ; Wu, Wei ; Ma, Tianfu ; Chen, Kunji ; Chen, Xiaoyuan ; Liu, Junming ; Liu, Zhiguo
Author_Institution :
Dept. of Phys., Nanjing Univ., China
Abstract :
We report the visible photoluminescence (PL) at room temperature from KrF excimer laser annealed a-Si:H/a-SiNx:H multi-quantum wells (MQWs). X-ray diffraction (XRD) and Raman scattering spectra demonstrate the microstructures of crystallized silicon within the MQWs and the crystallinity which can be controlled by excimer laser energy density. The wavelength of PL peak is around 640 nm and does not shift significantly with excimer laser energy
Keywords :
Raman spectra; X-ray diffraction; amorphous semiconductors; crystallisation; elemental semiconductors; laser beam annealing; photoluminescence; semiconductor quantum wells; silicon; silicon compounds; 640 nm; KrF excimer laser annealing; Raman scattering spectra; Si:H-SiN:H; X-ray diffraction; a-Si:H/a-SiNx:H multi-quantum well; crystallization; microstructure; visible photoluminescence; Annealing; Crystal microstructure; Crystallization; Photoluminescence; Quantum well devices; Raman scattering; Temperature; X-ray diffraction; X-ray lasers; X-ray scattering;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.499778
