• DocumentCode
    1667048
  • Title

    Microstructures and visible photoluminescence of excimer laser crystallized a-Si:H/a-SiNx:H multi-quantum wells

  • Author

    Li, Zhifeng ; Huang, Xinfan ; Wu, Wei ; Ma, Tianfu ; Chen, Kunji ; Chen, Xiaoyuan ; Liu, Junming ; Liu, Zhiguo

  • Author_Institution
    Dept. of Phys., Nanjing Univ., China
  • fYear
    1995
  • Firstpage
    185
  • Lastpage
    187
  • Abstract
    We report the visible photoluminescence (PL) at room temperature from KrF excimer laser annealed a-Si:H/a-SiNx:H multi-quantum wells (MQWs). X-ray diffraction (XRD) and Raman scattering spectra demonstrate the microstructures of crystallized silicon within the MQWs and the crystallinity which can be controlled by excimer laser energy density. The wavelength of PL peak is around 640 nm and does not shift significantly with excimer laser energy
  • Keywords
    Raman spectra; X-ray diffraction; amorphous semiconductors; crystallisation; elemental semiconductors; laser beam annealing; photoluminescence; semiconductor quantum wells; silicon; silicon compounds; 640 nm; KrF excimer laser annealing; Raman scattering spectra; Si:H-SiN:H; X-ray diffraction; a-Si:H/a-SiNx:H multi-quantum well; crystallization; microstructure; visible photoluminescence; Annealing; Crystal microstructure; Crystallization; Photoluminescence; Quantum well devices; Raman scattering; Temperature; X-ray diffraction; X-ray lasers; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-3062-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.1995.499778
  • Filename
    499778
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1667048