• DocumentCode
    166714
  • Title

    Thin-body ESD protections in 28nm UTBB-FDSOI: From static to transient behavior

  • Author

    Solaro, Y. ; Fonteneau, P. ; Legrand, Charles-Alexandre ; Marin-Cudraz, David ; Passieux, Jeremy ; Guyader, Pascal ; Clement, Laurent-Renaud ; Fenouillet-Beranger, C. ; Ferrari, P. ; Cristoloveanu, S.

  • Author_Institution
    STMicroelectron., Crolles, France
  • fYear
    2014
  • fDate
    7-12 Sept. 2014
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Innovative Ultra-Thin Body and Buried Oxide FDSOI protections (BBC-T and Z2-FET) are characterized and analyzed in order to assess the CDM time domain behavior. In addition to static (leakage and triggering) control, it is found that front and back gate coupling is a very efficient way to improve the transient responses of the proposed devices.
  • Keywords
    electrostatic discharge; field effect transistors; silicon-on-insulator; transient response; BBC-T; CDM time domain behavior; UTBB-FDSOI; Z2-FET; back gate coupling; front gate coupling; innovative ultra-thin body and buried oxide FDSOI protections; size 28 nm; static leakage control; static triggering control; thin-body ESD protections; transient behavior; transient responses; Random access memory; Silicon compounds; Solids;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
  • Conference_Location
    Tucson, AZ
  • ISSN
    0739-5159
  • Type

    conf

  • Filename
    6968792
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=166714