Title :
Device interactions between ESD diodes and NMOS clamps in CMOS processes
Author :
Stockinger, Michael ; Secareanu, Radu ; Hartin, Olin
Author_Institution :
Freescale Semicond., Inc., Austin, TX, USA
Abstract :
Device interactions between ESD diodes and NMOS clamps are analyzed in three different example layout configurations using equivalent circuits with parasitic devices. The observed SCR-like I-V behaviors pose a latch-up risk, even if the NMOS clamp resides in an isolated Pwell.
Keywords :
CMOS integrated circuits; MOSFET; electrostatic discharge; semiconductor diodes; CMOS processes; ESD diode; NMOS clamps; SCR like behavior; device interactions; equivalent circuits; latch-up risk; parasitic device; Clamps; Computer architecture; Electrostatic discharges; MOS devices; Rails; Semiconductor diodes; Thyristors;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
Conference_Location :
Tucson, AZ
