• DocumentCode
    166719
  • Title

    Device interactions between ESD diodes and NMOS clamps in CMOS processes

  • Author

    Stockinger, Michael ; Secareanu, Radu ; Hartin, Olin

  • Author_Institution
    Freescale Semicond., Inc., Austin, TX, USA
  • fYear
    2014
  • fDate
    7-12 Sept. 2014
  • Firstpage
    1
  • Lastpage
    9
  • Abstract
    Device interactions between ESD diodes and NMOS clamps are analyzed in three different example layout configurations using equivalent circuits with parasitic devices. The observed SCR-like I-V behaviors pose a latch-up risk, even if the NMOS clamp resides in an isolated Pwell.
  • Keywords
    CMOS integrated circuits; MOSFET; electrostatic discharge; semiconductor diodes; CMOS processes; ESD diode; NMOS clamps; SCR like behavior; device interactions; equivalent circuits; latch-up risk; parasitic device; Clamps; Computer architecture; Electrostatic discharges; MOS devices; Rails; Semiconductor diodes; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
  • Conference_Location
    Tucson, AZ
  • ISSN
    0739-5159
  • Type

    conf

  • Filename
    6968795
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=166719