Title :
Technology CAD simulation study for self-heating effects in Si/SiGe HBTs on thin-film SOI substrates
Author :
Liao, Shu-hui ; Chang, Shu-Tong ; Wang, Wei-Ching
Author_Institution :
Dept. of Electron. Eng., Chung Chou Inst. of Technol., Changhwa, Taiwan
Abstract :
The self-heating characteristic of Si/SiGe HBTs on thin-film SOI substrate is investigated by a technology CAD simulator. We examine both of the buried-oxide thickness and the silicon thickness effects on the device characteristics for thermal resistance. Simulation results show that the self-heating effect is not serious for the device under the situation of smaller oxide thickness. Besides, the enhanced silicon thickness can degrade the thermal resistance and thus needs to be carefully considered in device design. The thermal resistance characteristics revealed for Si/SiGe HBTs on thin-film SOI substrate may help to establish more accurate thermal model for reliability of circuit design and device technology optimization.
Keywords :
Ge-Si alloys; buried layers; elemental semiconductors; heterojunction bipolar transistors; semiconductor device models; silicon; silicon-on-insulator; substrates; technology CAD (electronics); thermal resistance; HBT; Si; Si-SiGe; buried oxide thickness; circuit design reliability; device technology optimization; self-heating effect; silicon thickness; technology CAD simulation; thermal model; thermal resistance; thin film SOI substrate; Circuit synthesis; Design optimization; Germanium silicon alloys; Semiconductor thin films; Silicon germanium; Substrates; Thermal degradation; Thermal resistance; Thin film circuits; Thin film devices;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424909
