The influences of annealing process on the characteristics of 0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 thin films

Author

Diao, Chien-Chen ; Yang, Cheng-Fu

Author_Institution

Dept. of Electron. Eng., Kao Yuan Univ., Kaohsiung, Taiwan

fYear

2010

Firstpage

1270

Lastpage

1271

Abstract

0.95 (Na_0.5Bi_0.5)TiO₃-0.05 BaTiO₃ + 1 wt% Bi₂O₃ (NBT-BT3) ceramic is used as target to deposit the NBT-BT3 thin films by sputtering method. The NBT-BT3 thin films were deposited under the optimal deposition parameters such as substrate temperature of 500Â°C, RF power of 100 W, chamber pressure of 10 mTorr, and oxygen concentration of 40%. The NBT-BT3 thin films are heated by a conventional thermal annealing (CFA) process conducted in air or in an O₂ atmosphere at temperatures ranging from 600-800Â°C for 60 min. The morphologies of NBT-BT3 thin films are observed using SEM. We have found that the annealing temperatures and atmosphere have large influences on SEM morphologies and C-V and I-V characteristics of NBT-BT3 thin films.

Keywords

annealing; barium compounds; bismuth compounds; ferroelectric ceramics; ferroelectric thin films; scanning electron microscopy; sodium compounds; sputter deposition; (Na_0.5Bi_0.5)TiO₃-BaTiO₃; NBT-BT3 thin films; O₂ atmosphere; SEM; air; annealing process; capacitance-voltage characteristic; chamber pressure; conventional thermal annealing; current-voltage characteristics; ferroelectric thin films; oxygen concentration; power 100 W; pressure 10 mtorr; sputtering method; temperature 500 degC to 800 degC; time 60 min; Annealing; Atmosphere; Bismuth; Ceramics; Morphology; Radio frequency; Sputtering; Temperature; Thermal conductivity; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424910

Filename

5424910