Title :
The influences of rapid-thermal annealing on the characteristics of Sr0.6Ba0.4Nb206 thin film
Author :
Yang, Cheng-Fu ; Diao, Chien-Chen ; Wu, Chia-Ching ; Leu, Ching-Chich
Author_Institution :
Dept. of Chem. & Mater. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
Abstract :
Strontium barium niobate, Sr0.6Ba0.4Nb2O6 (SBN) ceramic is used as the targets to deposit the SBN thin films. By careful control of sputtering parameters, the optimal sputtering parameters for depositing SBN thin films are the substrate temperature of 500°C, chamber pressure of 10 mTorr, RF power of 120W, and oxygen concentration of 40%. The rapid-thermal annealing (RTA) process is used to anneal the SBN thin films at different temperatures and their physical and electrical characteristics are investigated. The influences of RTA-treated temperatures on the crystalline characteristics, micrographs, leakage current density-electrical field (J-E) curves, and capacitance-voltage (C-V) curves are developed.
Keywords :
barium compounds; ferroelectric ceramics; ferroelectric thin films; leakage currents; niobium compounds; rapid thermal annealing; strontium compounds; RTA-treated temperatures; SBN ceramic; SBN thin films; Sr0.6Ba0.4Nb2O6; capacitance-voltage curves; crystalline characteristics; electrical characteristics; leakage current density-electrical field curves; micrographs; physical characteristics; power 120 W; pressure 10 mtorr; rapid-thermal annealing; sputtering parameters; strontium barium niobate; temperature 500 C; Annealing; Barium; Capacitance-voltage characteristics; Ceramics; Niobium compounds; Optimal control; Pressure control; Sputtering; Strontium; Temperature;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424912
