Study on the field emission characteristics of a-C:H films

Author

Lu, Zhanling ; Zhang, Binglin ; Yao, Ning ; Zhang, Xinyue

Author_Institution

Dept. of Phys., Zhengzhou Univ., Henan, China

fYear

2005

Abstract

Hydrogen contained nano-amorphous carbon films (a-C:H) were deposited on Si substrates by using microwave plasma chemical vapor deposition(MPCVD). A low turn-on field of 2.77 V/μm was obtained. The current density of 0.28 mA/cm² was obtained at electric field of 4.8 V/μm. When the electric field was increased to 6.85 V/μm, the current density was dramatically decreased to 0.067 mA/cm². It was found that the surface bonding ratio sp²/sp³ of 1.25 was decreased to 0.53. It was revealed that some of the sp² phase changed to sp³ due to arc-discharging, and sp² phase played a important role in field emission for a-C:H films. Field emission measurements from local emission sites of a-C:H films were carried out by using STM, and explained by DG model.

Keywords

amorphous state; bonds (chemical); carbon; current density; field emission; hydrogen; nanostructured materials; plasma CVD; scanning tunnelling microscopy; thin films; C:H; DG model; MPCVD; STM; Si; Si substrates; a-C:H films; arc-discharging; current density; field emission; local emission sites; microwave plasma chemical vapor deposition; nanoamorphous carbon films; sp²-sp³ phase change; surface bonding ratio; turn-on field; Amorphous materials; Bonding; Carbon dioxide; Current density; Electric variables measurement; Hydrogen; Iron; Physics; Semiconductor films; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International

Print_ISBN

0-7803-8397-4

Type

conf

DOI

10.1109/IVNC.2005.1619523

Filename

1619523