Title :
Reversible ferromagnetism study in un-doped ZnO thin film
Author :
Xia, D.X. ; Xie, F.Y. ; Zhang, W.H. ; Chen, J. ; Xu, J.B.
Author_Institution :
Electron. Eng. Dept., Chinese Univ. of Hong Kong, Shatin, China
Abstract :
Room temperature ferromagnetism in pure ZnO thin film prepared by sol-gel spin-coating method was observed, together with the obvious anisotropic property. In order to study the origin of ferromagnetism, ZnO thin films were rapidly annealed in N2 and O2 ambient in a repetitive way. Electrical and magnetic performance after each annealing was measured. It was found that ferromagnetism was quenched and re-appeared, in accordance with the decrease and increase of conductivity. These results provide further evidence that oxygen vacancies play a significant role in inducing ferromagnetism in ZnO thin films.
Keywords :
II-VI semiconductors; annealing; electrical conductivity; ferromagnetic materials; magnetic anisotropy; magnetic semiconductors; magnetic thin films; quenching (thermal); semiconductor thin films; sol-gel processing; spin coating; vacancies (crystal); zinc compounds; ZnO; anisotropic property; annealing; electrical conductivity; oxygen vacancies; quenching; reversible ferromagnetism; room temperature ferromagnetism; sol-gel spin-coating method; thin film; Annealing; Conductivity; Magnetic anisotropy; Magnetic films; Magnetic semiconductors; Perpendicular magnetic anisotropy; Substrates; Temperature; Transistors; Zinc oxide;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424921
