Study on SBD by SEM with penetrating surface method compared to EBIC method

The new penetrating surface method (PSM) was researched and developed successfully. The method was applied to SEM and developed the penetrating surface detector (PSD). When the PSM and the PSD were applied to study the semiconductor p-n junction, not only can the insulator layer on the surface of the semiconductor p-n junction be penetrated to detect and analyze the microstructures and characteristic of the semiconductor p-n junction, but also the two down-leads need not be welded to the two sides of the semiconductor p-n junction. The results of the experiments show the real characteristics of the semiconductor p-n junction. The PSM and PSD were applied to study and detect the palladium silicide-p-type silicon Schottky barrier diode (SBD). The results obtained are the same as the results of Xiaohua Xu and Ping Li with Electron Beam Induced Current (EBIC) on the SEM S250MK2 of Cambridge Instrument Ltd of UK. The secondary electron (SE) image in the SEM is presented. When the work voltage of PSD and the accelerating voltage (Acc V) of SEM was changed, the microstructures of the different depth of the Schottky junction of SBD can be observed. The experimental results show the nondestructive PSM is predominant over EBIC in detecting the SBD junction. With PSM and PSD, the sample need not be especially processed, the experiments are convenient and easy, and detecting is nondestructive, the image is very clear. The PSM and PSD are very helpful to detect nondestructively the microstructures of IC, vacuum nano-electron devices (VNED) and MEMS.