Title :
Si-based resonant tunneling diodes for room temperature operation
Author :
Wu, K.Y. ; Yu, I.S. ; Wang, K.Y. ; Cheng, H.H. ; Hung, K.M. ; Sun, G. ; Soref, R.A.
Author_Institution :
Dept. of Electron. Eng., Nat. Kaohsiung Univ. of Appl. Sci., Kaohsiung, Taiwan
Abstract :
We report a theoretical investigation on the electrical characteristic of n-type resonance tunneling diode for IV-IV compound. From the analysis, it shows that PVR ratio of the D4 band is significant larger than the D2 band as due to the much smaller effective mass of the D4 band. More importantly, a different structure is employed for room temperature operation and a reasonable PVR ratio is obtained which is desired for the application.
Keywords :
elemental semiconductors; resonant tunnelling diodes; silicon; D2 band; D4 band; IV-IV compound; PVR ratio; Si; effective mass; electrical characteristic; n-type resonance tunneling diode; room temperature; temperature 293 K to 298 K; Buffer layers; Diodes; Effective mass; Electric variables; Electrodes; Electrons; Germanium silicon alloys; Resonant tunneling devices; Silicon germanium; Temperature;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424923
