• DocumentCode
    1667651
  • Title

    GaN based nanorod technology for solid state lighting

  • Author

    Waag, Andreas

  • Author_Institution
    Institute of Semiconductor Technology
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    GaN nanorods and 3D columns recently attracted a lot of attention since they are expected to be an exciting new route towards solid state lighting. In contrast to a planar thin film technology, a completely 3-dimensional nanorod approach gives more freedom in the device design. E.g., a core-shell design of LEDs based on 3D GaN offer a dramatically enhanced active area per wafer footprint, since the active area is scaling with height of the 3D structures. High quality core-shell devices will have a tremendous impact on LED technology.
  • Keywords
    III-V semiconductors; gallium compounds; light emitting diodes; lighting; nanorods; thin films; wide band gap semiconductors; 3D columns; 3D structures; GaN; LED core-shell design; dramatically enhanced active area; high quality core-shell devices; nanorod technology; planar thin film technology; solid state lighting; three-dimensional nanorod approach; wafer footprint; Educational institutions; Gallium nitride; Light emitting diodes; MOCVD; Molecular beam epitaxial growth; Nanoscale devices; Solid state lighting;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6326187