Title :
Physical, electrical properties and reproducible resistance switching of ZrO2-TiO2 dielectric films
Author :
Hsu, Cheng-Hsing ; Lin, Shih-Yao
Author_Institution :
Dept. of Electr. Eng., Nat. United Univ., Miaoli, Taiwan
Abstract :
Electrical properties and microstructures of ZrTiO4 (ZrO2-TiO2) thin films prepared by the sol-gel method on ITO substrates at different annealing temperatures have been investigated. All films exhibited ZrTiO4 (111) and (101) orientations perpendicular to the substrate surface and the grain size increased with increasing annealing temperature. A low leakage current density of 1.47 × 10-6 A/cm2 was obtained for the prepared films. Considering the primary memory switching behavior of ZrTiO4, ReRAM based on ZrTiO4 shows promise for future nonvolatile memory applications.
Keywords :
annealing; dielectric thin films; electrical resistivity; grain size; leakage currents; random-access storage; sol-gel processing; titanium compounds; zirconium compounds; (101) orientation; (111) orientation; ITO substrates; InSnO; ReRAM; ZrO2-TiO2; ZrTiO4; annealing; dielectric thin films; grain size; leakage current density; memory switching; microstructures; nonvolatile memory applications; resistance switching; sol-gel method; substrate surface; Annealing; Dielectric substrates; Dielectric thin films; Electric resistance; Glass; Indium tin oxide; Leakage current; Random access memory; Surface morphology; Temperature;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424926
