High-speed switching module for a large capacity ATM switching system

Author

Tomonaga, Hiroshi ; Matsuoka, Naoki ; Kato, Yuji ; Watanabe, Yuu

Author_Institution

Fujitsu Lab. Ltd., Kawasaki, Japan

fYear

1992

Firstpage

123

Abstract

An ultra-high-speed asynchronous transfer mode (ATM) switching module having a highway throughput of 9.6 Gb/s using a HEMT process switch IC and a ceramic multichip substrate was developed. The switch IC operates at 1.2 Gb/s. This module provides a 4×4 switch, corresponding to a switching capacity of 256 channels at 156 Mb/s. High-speed switching is essential for constructing a large switching system with small volume and low power consumption. A simulation of both cell buffer operation and line characteristic is presented. The experimental results are shown

Keywords

asynchronous transfer mode; electronic switching systems; high electron mobility transistors; monolithic integrated circuits; 1.2 Gbit/s; 156 Mbit/s; 9.6 Gbit/s; ATM switching system; HEMT process switch IC; asynchronous transfer mode; cell buffer; ceramic multichip substrate; high speed switching system; line characteristic; switching capacity; throughput; Asynchronous transfer mode; B-ISDN; Circuit simulation; Clocks; Flip-flops; HEMTs; Latches; Memory; Switches; Switching systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Global Telecommunications Conference, 1992. Conference Record., GLOBECOM '92. Communication for Global Users., IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-0608-2

Type

conf

DOI

10.1109/GLOCOM.1992.276507

Filename

276507