Title :
Microstructure and thermal properties of phase change (GeSbSn)100-xCox optical recording films
Author :
Ou, Sin-Liang ; Kuo, Po-Cheng ; Ma, Shih-Hsien ; Shen, Chih-Long ; Tang, Wei-Tai ; Chiang, Don-Yau ; Lee, Chao-Te
Author_Institution :
Inst. of Mater. Sci. & Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
In this study, the (GeSbSn)100-xCox films (x = 0 ~ 13.3) were deposited on natural oxidized silicon wafer and glass substrate by dc magnetron co-sputtering of GeSbSn and Co targets. The thicknesses of the (GeSbSn)100-xCoxfilms and protective layer were 100 nm and 30 nm, respectively. The phase transition temperatures of (GeSbSn)100-xCox films are decreased with Co content. It is found that the activation energy of the (GeSbSn)100-xCox films will decrease from 1.53 eV to 0.55 eV as Co content increased from 0 at.% to 13.3 at.%.
Keywords :
germanium compounds; optical films; optical storage; GeSbSn; activation energy; dc magnetron co-sputtering; electron volt energy 0.55 eV to 1.53 eV; glass substrate; microstructure; natural oxidized silicon wafer; optical recording films; phase change; phase transition temperatures; protective layer; thermal properties; wavelength 100 nm; wavelength 30 nm; Microstructure;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424938
