• DocumentCode
    1667910
  • Title

    Microstructures and magnetic properties of single-layered FePt films by in situ annealing

  • Author

    Chen, S.C. ; Sun, T.H. ; Chang, C.L. ; Hong, W.H. ; Kuo, P.C.

  • Author_Institution
    Dept. of Mater. Eng., Ming Chi Univ. of Technol., Taipei, Taiwan
  • fYear
    2010
  • Firstpage
    1218
  • Lastpage
    1219
  • Abstract
    The single-layered FePt films with thickness of 30 nm are deposited directly on Si substrate without underlayer at substrate temperatures of 350 to 590 °C. As the substrate temperature is 350 °C, the L10 FePt(111) preferred orientation is presented and tended to in-plane magnetic anisotropy. However, the L10 FePt(001) texture is obtained and exhibited perpendicular magnetic anisotropy as the substrate temperature is increased to 470 °C. Its perpendicular coercivity (Hc¿), saturation magnetization (Ms) and perpendicular squareness (S¿) are reached to be 6.9 kOe, 674 emu/cm3 and 0.89 respectively, which reveal its significant potential as perpendicular magnetic recording media for ultra high-density recording.
  • Keywords
    annealing; coercive force; ferromagnetic materials; iron alloys; magnetic hysteresis; magnetic thin films; metallic thin films; perpendicular magnetic anisotropy; platinum alloys; texture; FePt; L10 FePt(001) texture; L10 FePt(111) preferred orientation; Si; in situ annealing; in-plane magnetic anisotropy; magnetic properties; microstructures; perpendicular coercivity; perpendicular magnetic anisotropy; perpendicular magnetic recording media; perpendicular squareness; saturation magnetization; single-layered films; size 30 nm; temperature 350 degC to 590 degC; ultra high-density recording; Annealing; Coercive force; Magnetic anisotropy; Magnetic films; Magnetic properties; Microstructure; Perpendicular magnetic anisotropy; Perpendicular magnetic recording; Semiconductor films; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424939
  • Filename
    5424939