DocumentCode :
1667910
Title :
Microstructures and magnetic properties of single-layered FePt films by in situ annealing
Author :
Chen, S.C. ; Sun, T.H. ; Chang, C.L. ; Hong, W.H. ; Kuo, P.C.
Author_Institution :
Dept. of Mater. Eng., Ming Chi Univ. of Technol., Taipei, Taiwan
fYear :
2010
Firstpage :
1218
Lastpage :
1219
Abstract :
The single-layered FePt films with thickness of 30 nm are deposited directly on Si substrate without underlayer at substrate temperatures of 350 to 590 °C. As the substrate temperature is 350 °C, the L10 FePt(111) preferred orientation is presented and tended to in-plane magnetic anisotropy. However, the L10 FePt(001) texture is obtained and exhibited perpendicular magnetic anisotropy as the substrate temperature is increased to 470 °C. Its perpendicular coercivity (Hc¿), saturation magnetization (Ms) and perpendicular squareness (S¿) are reached to be 6.9 kOe, 674 emu/cm3 and 0.89 respectively, which reveal its significant potential as perpendicular magnetic recording media for ultra high-density recording.
Keywords :
annealing; coercive force; ferromagnetic materials; iron alloys; magnetic hysteresis; magnetic thin films; metallic thin films; perpendicular magnetic anisotropy; platinum alloys; texture; FePt; L10 FePt(001) texture; L10 FePt(111) preferred orientation; Si; in situ annealing; in-plane magnetic anisotropy; magnetic properties; microstructures; perpendicular coercivity; perpendicular magnetic anisotropy; perpendicular magnetic recording media; perpendicular squareness; saturation magnetization; single-layered films; size 30 nm; temperature 350 degC to 590 degC; ultra high-density recording; Annealing; Coercive force; Magnetic anisotropy; Magnetic films; Magnetic properties; Microstructure; Perpendicular magnetic anisotropy; Perpendicular magnetic recording; Semiconductor films; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424939
Filename :
5424939
Link To Document :
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