Title :
Obvious suppression of performance degradation induced by thermal effect in SOI power LDMOSFETs using accumulation mode device structure
Author :
Cheng, Weitao ; Teramoto, Akinobu ; Ohmi, Tadahiro
Author_Institution :
Tohoku Univ., Sendai, Japan
Abstract :
In this paper, we demonstrate that the advantages of obvious improvement o f the mobility and current drivability at high temperatures and the greatly suppressed self-heating effects in accumulation mode SOI power LDMOSFETs. We reveal the mechanisms of these advantages are resulted from the bulk current and accumulation mode device structure and propose that the accumulation mode device structure is very useful to realize high performance SOI power LDMOSFETs.
Keywords :
MOSFET; silicon-on-insulator; LDMOSFETs; Si; accumulation mode device structure; bulk current; self-heating; silicon-on-insulator; Cleaning; Large scale integration; MOSFET circuits; Microwave devices; Oxidation; Plasma density; Plasma devices; Plasma temperature; Silicon on insulator technology; Thermal degradation; Accumulation mode; High temperature; LDMOSFET; Self-heating; bulk current; silicon-on-insulator;
Conference_Titel :
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-4432-8
Electronic_ISBN :
978-90-75815-13-9
