DocumentCode
1667953
Title
Status and technology of SOI substrate material
Author
Allen, L.P. ; Skinner, W. ; Cate, A.
Author_Institution
Epion Corp., Billerica, MA, USA
fYear
2001
Firstpage
5
Lastpage
7
Abstract
Silicon-on-insulator technology announcements during the past year show, without doubt, that SOI substrates are entering mainstream IC production. High performance microprocessors and advanced circuitry from significant worldwide chipmakers are moving to silicon-on-insulator substrates. Benefits from decreased operating voltages, low power consumption, higher radiation and temperature tolerance, and device scaling are realized in existing and planned SOI circuit applications. Key factors leading up to this present upbeat material status are that SOI substrate quality and cost have attained improved and acceptable levels for end-user industries. Areas of substrate material challenges remain, however, with respect to thin (<50nm) silicon material consistency, cost, and volume.
Keywords
CMOS integrated circuits; integrated circuit manufacture; integrated circuit technology; semiconductor technology; silicon-on-insulator; BOX; SOI substrates; Si-SiO/sub 2/; advanced circuitry; device scaling; high performance microprocessors; low power consumption; mainstream IC production; material consistency; material status; radiation tolerance; substrate cost; substrate quality; temperature tolerance; Circuits; Costs; Demand forecasting; Economic forecasting; Manufacturing industries; Materials science and technology; Production; Semiconductor device manufacture; Silicon on insulator technology; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2001 IEEE International
Conference_Location
Durango, CO, USA
ISSN
1078-621X
Print_ISBN
0-7803-6739-1
Type
conf
DOI
10.1109/SOIC.2001.957958
Filename
957958
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