• DocumentCode
    1667953
  • Title

    Status and technology of SOI substrate material

  • Author

    Allen, L.P. ; Skinner, W. ; Cate, A.

  • Author_Institution
    Epion Corp., Billerica, MA, USA
  • fYear
    2001
  • Firstpage
    5
  • Lastpage
    7
  • Abstract
    Silicon-on-insulator technology announcements during the past year show, without doubt, that SOI substrates are entering mainstream IC production. High performance microprocessors and advanced circuitry from significant worldwide chipmakers are moving to silicon-on-insulator substrates. Benefits from decreased operating voltages, low power consumption, higher radiation and temperature tolerance, and device scaling are realized in existing and planned SOI circuit applications. Key factors leading up to this present upbeat material status are that SOI substrate quality and cost have attained improved and acceptable levels for end-user industries. Areas of substrate material challenges remain, however, with respect to thin (<50nm) silicon material consistency, cost, and volume.
  • Keywords
    CMOS integrated circuits; integrated circuit manufacture; integrated circuit technology; semiconductor technology; silicon-on-insulator; BOX; SOI substrates; Si-SiO/sub 2/; advanced circuitry; device scaling; high performance microprocessors; low power consumption; mainstream IC production; material consistency; material status; radiation tolerance; substrate cost; substrate quality; temperature tolerance; Circuits; Costs; Demand forecasting; Economic forecasting; Manufacturing industries; Materials science and technology; Production; Semiconductor device manufacture; Silicon on insulator technology; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2001 IEEE International
  • Conference_Location
    Durango, CO, USA
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-6739-1
  • Type

    conf

  • DOI
    10.1109/SOIC.2001.957958
  • Filename
    957958